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ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
ELECTRICAL CHARACTERISTICS (continued)
((V IN = 2.75V to 13.2V and V AUXIN = 0V) or (V IN = 1V and V AUXIN = 2.75V to 13.2V), R STH = open, R FTH = 0, V UVLO = 1V, V OVI = 0V,
T A = -40°C to +85°C, unless otherwise noted. Typical values are at V IN = 12V and T A = +25°C. See the Typical Operating Circuit.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
ORing MOSFET CONTROL
ORing MOSFET Turn-On Time
t ON
C GATE = 10nF, C EXT = 100nF,
MOSFET gate threshold = 2V
10
25
μs
ORing MOSFET Forward Voltage
Threshold (Fast Comparator)
V DTH
(V IN - V BUS ) rising, V AUXIN ≥ 2.75V
5
12.5
20
mV
ORing MOSFET Reverse Voltage
Turn-Off Threshold (Fast
Comparator (V IN - V BUS ))
V FTH
R FTH = 0
R FTH = 12k ?
R FTH = 27k ? , V IN ≥
V AUXIN ≥
2.75V
-12
-63
-126
-24
-104
-204
-31
-150
-300
mV
ORing MOSFET Reverse Voltage
Blanking Time (Fast Comparator)
t FBL
V BUS = 2.8V, R FTH = 0,
V BUS - V IN = 0.3V
50
ns
Slow-Comparator Output Voltage
Threshold on STH
ORing MOSFET Reverse Voltage
Turn-Off Threshold (Slow
V O_STH
V STH
V IN ≥ 2.75V
R STH open
R STH = 500k ?
0.95
-0.1
1
-12
-25
1.05
-24.0
V
mV
Comparator (V IN - V BUS ))
(V IN - V BUS ) to I STH
R STH = 64k ?
-100
Transconductance (Slow
G M_STH
V STH = 0V
0.17
mS
Comparator)
ORing MOSFET Reverse Voltage
STH floating
0.5
0.9
1.5
Blanking Time (Slow
Comparator)
t SBL
C STH = 0.047μF
C STH = 0.22μF
5
14
ms
ORing MOSFET DRIVER
Gate-Charge Current
I GATE
C EXT = 100nF, V IN ≥ 2.75V
0.7
2
mA
Gate Discharge Current (Note 3)
I GATE.DIS_MIN
V GATE = V IN , V IN = 5.1V, V BUS = 5V;
V OUT = 1V
V GATE ≥ V IN , V IN = 2.75V, V BUS = 3.5V
0.9
2
1.3
6.8
A
V GATE ≥ V IN , V IN = 12V, V BUS = 13.2V
3.2
Gate Fall Time
t FGATE
V BUS = 3.5V, C GATE = 0.1μF
V BUS = 3.5V, C GATE = 0.01μF
600
200
ns
Gate Discharge Current Delay
Time (Time from V IN Falling from
t DIS_GATE
V BUS = 3.5V
70
200
ns
3.7V to 3V to V GATE = V IN )
Gate to IN Resistance
R GATE_IN
(V GATE - V IN ) = 100mV; V IN ≥ 2.75V
900
?
Gate to IN Clamp Voltage
V GATE_IN_CLAMP I GATE = 10mA, V IN ≥ V BUS
8.5
11
V
Gate-Drive Voltage (Measured
with Respect to V IN )
(V GATE - V IN )
2.7V < V IN < 13.2V
V IN = 13.2V
3.8
6.5
7
7.7
V
V IN = 2.75V
4.5
5
5.5
V IN Switchover Threshold to
Higher GATE Voltage (Note 4)
V IN_SOTH+
7.4
8
8.5
V
_______________________________________________________________________________________
3
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